Modelling of High Quantum Efficiency Avalanche Photodiode
Authors
Abstract:
A model of a low noise high quantum efficiency n+np Germanium Photodiode utilizing ion implantation technique and subsequent drive-in diffusion in the n layer is presented. Numerical analysis is used to study the influence of junction depth and bulk concentration on the electric field profile and quantum efficiency. The performance of the device is theoretically treated especially at the wave-length region 1.55μm where the Silica optical fiber has minimum attenuation loss. It has been found that at this wave-length and for the optimum device design the quantum efficiency approaches about 90%.
similar resources
Avalanche photodiode A User Guide
Introduction Avalanche photodiode detectors (APD) have and will continue to be used in many diverse applications such as laser range finders, data communications or photon correlation studies. This paper discusses APD structures, critical performance parameter and excess noise factor. For low-light detection in the 200to 1150-nm range, the designer has three basic detector choices the silicon P...
full textAlInAsSb/GaSb staircase avalanche photodiode
Articles you may be interested in Low-noise AlInAsSb avalanche photodiode Appl. Enhanced frequency response associated with negative photoconductance in an InGaAs/InAlAs avalanche photodetector Appl.
full textStudies of Avalanche Photodiode Performance in a High Magnetic Field
We report the results of exposing a Hamamatsu avalanche photodiode (APD) to a 7.9 Tesla magnetic field. The effect of the magnetic field on the gain of the APD is shown and discussed. We find APD gain to be unaffected in the presence of such a magnetic field.
full textInGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product.
Increasing reliance on the Internet places greater and greater demands for high-speed optical communication systems. Increasing their data transfer rate allows more data to be transferred over existing links. With optical receivers being essential to all optical links, bandwidth performance of key components in receivers, such as avalanche photodiodes (APDs), must be improved. The APDs rely on ...
full textDesign of High Quantum Efficiency and High Resolution, Si/SiGe Avalanche Photodiode Focal Plane Arrays Using Novel, Back- Illuminated, Silicon-on-Sapphire Substrates
The design and development of large scale, high quantum efficiency and high resolution silicon and silicon-germanium (Si/SiGe) avalanche photodiode (APD) focal plane arrays (FPAs) is an active topic of research due to the wide range of scientific, medical and industrial applications for such high sensitivity imagers. Avalanche photodiodes can attain single photon sensitive operation due the lar...
full textCharacterization of a Geiger-mode Avalanche Photodiode
A 32 by 32 array of packaged 100 μm Geiger-mode avalanche photodiodes were tested and characterized. A breakdown voltage of 32 V was measured; at or just above this voltage is where the device should be biased in order to operate in Geiger-mode. The ideal region of the forward biased IV curve resulted in an ideality factor of 1.0 and no recombination/generation region. In addition, IDL code was...
full textMy Resources
Journal title
volume 15 issue 4
pages 509- 515
publication date 2019-12
By following a journal you will be notified via email when a new issue of this journal is published.
Hosted on Doprax cloud platform doprax.com
copyright © 2015-2023